Virtual Bookstore Citation Title STUDY OF THE PHYSICS OF INSULATING FILMS AS RELATED TO THE RELIABILITY OF METAL-OXIDE SEMICONDUCTOR DEVICES. Author(s) Aitken,John M. ;Calise,J. ;DeKeersmaecker,Roger F. ;DeMeyer,K. ;DiMaria,D. J. ; Corporate Author(s) IBM THOMAS J WATSON RESEARCH CENTER YORKTOWN HEIGHTS NY Report Date 7/1/1981 Page Count 204 Abstract These papers discuss electron trapping on sites related to H2O, thesubsequent interface states generated by the trapping, and the reduction ofthese traps by high temperature nitrogen annealing. Radiation induced neutraltrapping centers are discussed in relation to electron or hole capital on them.A new electrically alterable memory device using a dual electron injectorstructure composed of silicon-rich silicon dioxide and silicon dioxide layers isdescribed. Material characterization is the Fi-rich SiO subscript 2 film,discussed using attenuated total reflectance, raman scattering, and opticalabsorption measurements. Detection of trap impurities, on Fi surfaces is studiedusing electron trapping character techniques. (Author) Price: Available from National Technical Information Service (NTIS). http://www.ntis.gov   Prices are plus sales tax when purchased within New York State and shipping charges, if applicable