Virtual Bookstore Citation Title RELIABILITY PREDICTION FOR MICROWAVE TRANSISTORS. Author(s) LaCombe,Donald J. ;Naster,Ronald J. ; Corporate Author(s) GENERAL ELECTRIC CO SYRACUSE N Y ELECTRONICS LAB Report Date 6/1/1976 Page Count 148 Abstract This report presents the results of a study to evaluate the failuremechanisms that occur in state-of-the-art microwave power transistors, and topredict the reliability and lifetime that might be expected from these devices.A series of accelerated r-f life tests of both aluminum and refractory metal-gold metallized transistors were carried out under both CW and pulsedconditions. The aluminum metallized devices were found to be susceptible tofailure due to electromigration voiding of the metallization. This failuremechanism will limit the useful lifetime of these devices. The refractorymetal-gold devices were found to have a long life capability, but metallizationpeeling on some devices limited their lifetime during these tests. Furthereffort is necessary to evaluate the peeling problem and proposed solutions.(Author) Price: Available from National Technical Information Service (NTIS). http://www.ntis.gov   Prices are plus sales tax when purchased within New York State and shipping charges, if applicable