Virtual Bookstore Citation Title STRUCTURE AND RELIABILITY METAL CONTACTS TO GAAS. Author(s) Weber, Eicke R.; Washburn, Jack Corporate Author(s) CALIFORNIA UNIV BERKELEY DEPT OF MATERIALS SCIENCE AND MINERAL ENGINEERING Report Date 12/31/1991 Page Count 43 Abstract These results make it clear that any change in near-interfacialstoichiometry, e.g., by reaction of the metal overlayer with the substrate, willresult in a change in barrier height and thus a change in the electricalperformance of the device. Using electrical and microstructuralcharacterization, we have investigated a wide range of metal/GaAs systemsincluding the metals Ti, Al, Cr, Pd and Au. The Fermi level pinning position isfound to relate directly to the amount of excess As near the interface: very As-rich GaAs results in pinning near midgap and thus a low barrier height for n-GaAs; less As-rich conditions result in pinning closer to the valence band andthus a high barrier height for n-GaAs. The observation was made by comparingnear-interfacial stoichiometry of different metals with low and high barrierheight, and by studying the change in near-interfacial stoichiometry uponannealing. Price: Available from National Technical Information Service (NTIS). http://www.ntis.gov   Prices are plus sales tax when purchased within New York State and shipping charges, if applicable